Teledyne HiRel Semiconductors Introduces Isolated GaN Gate Driver for High-Efficiency Power Conversion Systems

7/29/2026

​​Integrated bias supply simplifies GaN power designs and eliminates bootstrap circuitry

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GARLAND, Texas — July 29, 2026 — Teledyne HiRel Semiconductors, a business unit of Teledyne Technologies Incorporated and a leading supplier of high-reliability semiconductor solutions, with more than a decade of experience in gallium nitride (GaN) for aerospace, defense, space and industrial applications, today announced the release of the TDGD85110EP​, an isolated, single-channel gate driver that simplifies the implementation of GaN transistors in high-performance power conversion systems.


As power systems evolve toward higher efficiency, greater power density and smaller size and weight, designers are increasingly adopting GaN technology, whose higher switching frequencies shrink magnetic components but raise the bar for gate-drive performance. The TDGD85110EP meets that demand by integrating signal isolation and an isolated bias supply into a single compact device, eliminating the need for external secondary-side bias supplies or high-side bootstrap circuits. The result is a lower component count, simpler design and more efficient system to support applications such as ac-dc and dc-dc power supplies, battery management systems, motor drives, fast-charging infrastructure, uninterruptible power supplies (UPS) and aerospace and defense power systems.


"The TDGD85110EP integrates key gate-drive functions into a single device, helping customers accelerate GaN adoption while reducing system complexity," said Mont Taylor, Vice President of Business Development at Teledyne HiRel Semiconductors. "By combining isolation and bias generation in a compact solution, the device enables designers to more fully realize the efficiency and power-density advantages of GaN technology."


Key Features

  • 5 kV RMS galvanic isolation
  • Greater than 100 V/ns common-mode transient immunity (CMTI)
  • Fast 50 ns propagation delay
  • Supports high-voltage inputs greater than 10 V and low-voltage inputs greater than 6 V
  • 100% tested for ac and dc parameters across three temperatures
  • Qualified for operation from -55°C to +125°C


Availability

The TDGD85110EP is available now. Evaluation hardware, design tools and application support are available to help customers accelerate product development and integration.  Contact us for ordering information.​