Teledyne Microwave Solutions Paradise High Power Pulsed Amplifier delivers 4.0 kW (4,074 W) saturated output at X-Band (9 to 10 GHz) in a 4RU indoor rack-mount chassis. GaN solid state design with 10% max duty cycle, 1-100 microsecond pulse width, Ethernet remote control, and hot-swap fan assemblies for radar and ship-board applications.
High Power Pulsed Amplifier -- GaN 4.0 kW X-Band
Radar systems and ship-board environments that require 4.0 kW solid state pulsed waveform amplification at X-Band demand a chassis engineered for high peak power GaN operation with front-panel access for field maintenance.
High Power Pulsed Amplifier GaN X-Band 4.0 kWThe Teledyne Microwave Solutions Paradise High Power Pulsed Amplifier is a GaN solid state 4RU rack-mount unit delivering 4.0 kW saturated output power at X-Band (9 to 10 GHz) for radar and ship-board environments with 10 percent maximum duty cycle and Ethernet remote control.
Teledyne Microwave Solutions Paradise offers the High Power Pulsed Amplifier for X-Band radar and ship-board applications. Key specifications: 4.0 kW (4,074 W) Psat at 9-10 GHz, 10% max duty cycle, 1-100 microsecond pulse width, 4RU indoor rack-mount, 48 VDC prime power, Ethernet control.
- Frequency
- 9 to 10 GHz (X-Band)
- Output Power (Psat)
- 66.1 dBm (4,074 W) typical
- RF Duty Cycle
- 10% maximum
- Pulse Width
- 1 to 100 microseconds
- Form Factor
- 4RU, 19-inch rack-mount
- Prime Power
- 48 VDC (220 VAC optional)
This pulsed amplifier is used in X-Band radar systems, ship-board transmitter replacements, and defense programs requiring solid state GaN pulsed power amplification at 9 to 10 GHz.
High Power Pulsed Amplifier -- GaN X-Band 4.0 kW Overview
The Teledyne Microwave Solutions Paradise High Power Pulsed Amplifier (216807 REV E) is a GaN solid state pulsed SSPA delivering 4.0 kW (4,074 W) saturated output power across 9 to 10 GHz in a 4RU indoor rack-mount chassis. Designed for radar applications and ship-board environments, the amplifier provides a solid state alternative to magnetron and TWT-based pulsed transmitters with the reliability and maintenance advantages of GaN semiconductor technology.
Pulsed Operation Specifications
- Output Power (Psat, typical): 66.1 dBm, 4,074 W at 9 to 10 GHz.
- Maximum RF duty cycle: 10 percent.
- Pulse width range: 1 to 100 microseconds.
- RF input level: -1 to +1 dBm. Input connector: 50 ohm SMA female.
- RF output connector: WR-90 UG136 B/U waveguide choke flange.
- VSWR: 1.5:1 maximum.
Chassis and Interface Design
- 4RU indoor rack-mount chassis in a standard 19-inch equipment rack.
- Dimensions: 6.968 x 19.000 x 17.000 inches (177 x 483 x 432 mm). Weight: 51.0 lbs (23.2 kg).
- All connectors are front-facing for accessibility in rack environments: J1 RF Input (SMA-F), J2 RF Output (WR-90 waveguide), J3 Pulse Gate Input (BNC-F), J4 DC Power (23 Shell MIL-DTL), J5 Ethernet (RJ45 IP67).
- Two removable hot-swappable fan assemblies on the front panel.
- Green/red front panel status indicator for normal operation and fault status.
Radar and Ship-Board Applications
The High Power Pulsed Amplifier is designed for X-Band radar systems requiring 4.0 kW peak power solid state pulsed waveform amplification, and ship-board environments where a rack-mount GaN pulsed HPA replaces tube-based alternatives. The 48 VDC prime power input with optional 220 VAC is compatible with both land-based radar station power infrastructure and shipboard DC power systems.
Related Terms and Technologies
Also referred to as X-Band pulsed HPA, pulsed solid state power amplifier, GaN pulsed transmitter module, or radar pulsed amplifier. Related technologies include GaN solid state power amplifiers (SSPAs), traveling wave tube amplifiers (TWTAs), magnetron transmitters, and pulse gate modulation for duty cycle control. The document number for this product is 216807. Classification: EAR99, subject to US Department of Commerce export regulations.
