FAQ

What power IC and GaN device categories does Teledyne HiRel offer?

• The portfolio covers DC-DC converters and signal processors, GaN gate drivers, GaN HEMTs, GaN power modules, Point-of-Load regulators, and high-reliability power modules.

• All categories are available with qualification and screening options appropriate to space and defense program tiers.

• GaN-based products are built on leading-edge Gallium Nitride technology delivering high power density for demanding applications.
  
   

What is the GaN power density advantage and why does it matter for space applications?

• GaN HEMT technology enables power density designs up to four times higher than legacy alternative technologies.

• In space and airborne applications, higher power density means the same output power from a significantly smaller and lighter device.

• Reduced mass and volume directly benefits satellite and spacecraft power budgets, and reduces thermal management requirements.
  
   

What radiation tolerance data is available for Teledyne HiRel power products?

• Space-grade power products are supported by Total Ionizing Dose test reports.

• GaN-based power circuits have inherent radiation tolerance advantages due to the wide bandgap characteristics of Gallium Nitride.

• Peregrine RF-based POL products combine outstanding radiation performance with high integration for space power system design.
  
   

What power device test capabilities does Teledyne HiRel have?

• Power device testing extends to 200 A pulsed current and up to 30 kV.

• Test types include surge current, dynamic RDSon, thermal impedance, and thermal resistance measurements.

• Target devices include wide bandgap power devices and ICs including power management and gate drivers, with die-level high-voltage testing available.
  
   

What qualification standards apply to Teledyne HiRel power ICs and GaN devices?

• Products are available with qualification or screening to MIL-PRF-38534 Class H, MIL-PRF-38535 Class B/Q/V, MIL-STD-750, and MIL-STD-883.

• Space COTS qualification is available for programs with cost and schedule constraints.

• Custom SCD qualification flows can be developed to meet program-specific reliability and screening requirements.
  
   

What packaging formats are available for power ICs and GaN devices?

• Hermetic ceramic and metal/AlSiC packaging for space and high-reliability defense applications.

• Plastic encapsulated packages for cost-sensitive or volume applications.

• Hybrid module and bare die formats for integrated multi-chip power module assembly.
  
   

Can Teledyne HiRel support custom power device qualification requirements?

• Yes. Custom SCD flows are developed in collaboration with program teams to specify tailored screening steps.

• Power device testing infrastructure at the Milpitas, California facility supports environmental, electrical, and radiation test requirements.

• Customer-furnished power device wafers and packaged parts can be incorporated into the qualification and test flow.
  
   

What markets does the Teledyne HiRel power IC and GaN device portfolio serve?

• Space: satellites, launch vehicles, and deep-space missions requiring radiation-tolerant, long-life power conversion.

• Defense and aerospace: radar, electronic warfare, and avionics power stages requiring qualified GaN and power IC solutions.

• Industrial and nuclear: high-reliability applications requiring long-service-life power components with documented qualification.
  
  

High-Reliability Power Technology Overview

Power subsystem design for space and defense applications requires careful attention to radiation tolerance, thermal management, qualification traceability, and long-term supply assurance. Teledyne HiRel's power IC and GaN device portfolio addresses each of these requirements through leading-edge GaN technology, mature power IC design, and a comprehensive qualification and screening infrastructure.

GaN Technology for Power Applications

• GaN HEMT: high breakdown voltage, high electron mobility, high power density for RF and power switching

• Wide bandgap advantage: GaN's wider bandgap provides inherent radiation tolerance and supports higher operating temperatures

• Power density: up to four times higher than legacy alternatives -- critical for mass- and volume-constrained platforms

• Switching performance: low gate charge and fast switching allow higher frequency operation, reducing passive component size

Qualification Tier Selection for Power Devices

• Space COTS: suitable for LEO constellation programs with defined mission durations and moderate radiation environments

• Class H (MIL-PRF-38534): applicable to hybrid microcircuit power modules

• Class Q / Class V (MIL-PRF-38535): for GaN ICs and power management ICs requiring QML qualification

• MIL-STD-750: applicable to discrete power semiconductor device testing and qualification

• Custom SCD: program-specific flows developed to balance reliability assurance with cost and schedule

Wide Bandgap Power Device Parameters

• Breakdown voltage (V): maximum sustainable voltage without avalanche or catastrophic failure

• RDSon (ohms): on-state drain-source resistance; lower values indicate lower conduction loss

• Dynamic RDSon: RDSon under switching conditions; can be higher than static RDSon in GaN devices

• Gate charge (nC): total charge to switch the gate; lower values enable faster switching

• Thermal resistance junction-to-case (C/W): determines maximum power dissipation at given case temperature